dhg 20 i 600ha advanced sonic-frd symbol definition r a t i n g s features / advantages: planar passivated chips very low leakage current very short recovery time improved thermal behaviour very low irm-values very soft recovery behaviour avalanche voltage rated for reliable operation soft reverse recovery for low emi/rfi low irm reduces: - power dissipation within the diode - turn-on loss in the commutating switch typ. max. i fsm i r a a v 150 i fav a v f 2.31 r thjc 0.90 k/w v r = 1 3 min. 20 ms (50 hz), sine applications: antiparallel diode for high frequency switching devices antisaturation diode snubber diode free wheeling diode rectifiers in switch mode power supplies (smps) uninterruptible power supplies (ups) v rrm v 600 30 t vj v c = t vj c = ma 3 package: part number v r = t vj = c i f =a v t c =85c p tot 140 w t c c = a i rm 8 /dt i f =a; v r =v a t rr e a s tbd mj t vj c = i a s =a;l = h i a r a v a = tbd f = 10 khz 1.5v r typ.; t vj 150 c -55 high performance fast recovery diode low loss and soft recovery single diode v i t rrm fav rr = = = 600 20 35 20 t vj =45c 20 -di f = 400 a/s 400 tbd 100 dhg 20 i 600ha v a ns 600 v 600 25 25 25 t p =10 25 max. repetitive reverse voltage reverse current forward voltage average forward current thermal resistance junction to case virtual junction temperature total power dissipation max. forward surge current max. reverse recovery current non-repetitive avalanche energy repetitive avalanche current reverse recovery time conditions unit 3.08 t vj c = 25 c j tbd pf j unction capacitance v r =v; 300 t vj 125 v f0 v 1.31 t vj = 150 c r f 36.9 f = 1 mhz =c 25 m to-247ad v 2.15 t vj =c i f =a v 20 125 3.00 i f =a 40 i f =a 40 ns 35 ns industry standard outline epoxy meets ul 94v-0 rohs compliant t vj c =25 t vj c = 125 t vj c =25 t vj c = 125 rectangular, d = 0.5 threshold voltage slope resistance for power loss calculation only backside: cathode ixys reserves the right to change limits, conditions and dimensions. ? 2006 ixys all rights reserved 0629 * data according to iec 60747and per diode unless otherwise specified
dhg 20 i 600ha advanced i rms a per pin* 70 r thch k/w 0.25 m d nm 1.2 mounting torque 0.8 t st g c 150 storage temperature -55 weight g 6 c e f d b a k g h j l n m dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 symbol definition ratings typ. max. min. conditions rms current thermal resistance case to heatsink unit * irms is typically limited by: 1. pin-to-chip resi stance; or by 2. current capability of the chip. in case of 1, a common cathode/anode configuration and a no n-isolated backside, the whole cu rrent capability can be used by c onnecting the backside. outlines to-247ad f c n 120 mounting force with clip 20 ixys reserves the right to change limits, conditions and dimensions. ? 2006 ixys all rights reserved 0629 * data according to iec 60747and per diode unless otherwise specified
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